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| FDMA510PZ Single P-Channel PowerTrench(R) MOSFET April 2008 FDMA510PZ Single P-Channel PowerTrench(R) MOSFET -20V, -7.8A, 30m Features Max rDS(on) = 30m at VGS = -4.5V, ID = -7.8A Max rDS(on) = 37m at VGS = -2.5V, ID = -6.6A Max rDS(on) = 50m at VGS = -1.8V, ID = -5.5A Max rDS(on) = 90m at VGS = -1.5V, ID = -2.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3KV typical (Note 3) RoHS Compliant tm General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 D D G Bottom Drain Contact Drain Source D D 1 2 3 6 5 4 D D S G D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -20 8 -7.8 -24 2.4 0.9 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 C/W Package Marking and Ordering Information Device Marking 510 Device FDMA510PZ Package MicroFET 2X2 Reel Size 7'' Tape Width 8mm Quantity 3000units (c)2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1 1 www.fairchildsemi.com FDMA510PZ Single P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS = 0V -20 -13 -1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -7.8A VGS = -2.5V, ID = -6.6A rDS(on) Static Drain to Source On Resistance VGS = -1.8V, ID = -5.5A VGS = -1.5V, ID = -2.0A VGS = -4.5V, ID = -7.8A ,TJ = 125C gFS Forward Transconductance VDD = -5V, ID = -7.8A -0.4 -0.7 3 27 34 46 60 36 26 30 37 50 90 40 S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 1110 205 185 1480 275 280 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VDD = -5V, ID = -7.8A VGS = -4.5V VDD = -10V, ID = -7.8A VGS = -4.5V, RGEN = 6 7 9 125 64 19 2.1 4.2 14 18 200 103 27 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -2A IF = -7.8A, di/dt = 100A/s -0.8 66 44 -2 -1.2 106 71 A V ns nC Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 52C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1 2 www.fairchildsemi.com FDMA510PZ Single P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 24 20 -ID, DRAIN CURRENT (A) VGS = -4.5V VGS = -1.8V VGS = -2.5V VGS = -2V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 VGS = -1.5V VGS = -1.8V 2.0 VGS = -2V VGS = -2.5V 16 12 1.5 VGS = -1.5V 8 4 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -4.5V 0.5 0 4 8 12 16 20 24 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = -7.8A VGS = -4.5V rDS(on), DRAIN TO PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 150 ID = -7.8A 100 TJ = 125oC 50 TJ = 25oC -50 -25 0 25 50 75 100 125 150 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 24 20 -ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDD = -5V 1 16 12 8 4 0 0.0 0.1 TJ = 150oC TJ = 25oC TJ = -55oC TJ = 25oC TJ = 150oC 0.01 TJ = -55oC 0.5 1.0 1.5 2.0 2.5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1 3 www.fairchildsemi.com FDMA510PZ Single P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4.5 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -7.8A 3000 Ciss CAPACITANCE (pF) 3.0 VDD = -3V VDD = -5V 1000 Coss 1.5 VDD = -7V f = 1MHz VGS = 0V Crss 0.0 0 5 10 Qg, GATE CHARGE(nC) 15 20 100 0.1 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 10 -Ig, GATE LEAKAGE CURRENT(A) -1 -2 -3 -4 -5 -6 -7 -8 -9 10 10 10 10 10 10 10 10 -ID, DRAIN CURRENT (A) 10 VDS = 0V 10 100us 1ms TJ = 125oC 1 THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 1s 10s DC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 145oC/W TA = 25oC TJ = 25oC -10 0.01 0.1 0 3 6 9 12 15 -VGS, GATE TO SOURCE VOLTAGE (V) 1 10 60 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage 400 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area 100 SINGLE PULSE RJA = 145oC/W TA = 25oC VGS = -4.5V 10 1 0.5 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation (c)2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1 4 www.fairchildsemi.com FDMA510PZ Single P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 145 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1 5 www.fairchildsemi.com FDMA510PZ Single P-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout (c)2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1 6 www.fairchildsemi.com FDMA510PZ Single P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com |
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